The Dynex Bypass Thyristor range of devices is specially designed for the protection of IGBT modules in Voltage Source Converter multi-level applications, where a reduced forward blocking voltage is required. Very Low Cosmic Ray FIT Rating, High Surge Capability, High dv/dt Rating
The primary characteristic of the bypass thyristor which determines current diversion from the IGBT diode is dynamic on-state voltage, with overall turn-on time a secondary influence. Highly optimised, Low FIT, low Vt, 3.3kV and 4.5kV bypass thyristor devices have been produced for VSC protection.
Voltage Source Converter (VSC) technology provides a number of advantages over traditional (LCC) HVDC including self-commutation, small footprint, and black start capability and is becoming increasingly popular in applications such as offshore wind.With higher voltage systems, where the current handling capability of the IGBT diode is reduced, effective current diversion becomes essential.
Podstawowe informacje:
Oznaczenie producenta | ACR3200VR33 |
Typ składnika: | Trisil |
Kategorie | Trisil-Overvoltage Protection |
Konfiguracja: | single TY |
Rodzaj sprawy: | PUK |
Obudowa [inch] : | PUK110/73x27T |
Rodzaj materiału: | Si-Silicon |
RoHS | Tak |
REACH | Nie |
NOVINKA | N |
RoHS1 | Ano |
Opakowania i wagi:
Jednostki: | szt |
Waga: | 1200 [g] |
Rodzaj opakowania: | BOX |
Małe opakowanie (liczba sztuk): | 6 |
Parametry elektrofizyczne:
Idc max (Tc/Ta=60÷69°C) | 3200 [A] |
du/dt (critical rate of rise of on-state voltage) | 10000 [V/µs] |
di/dt (critical rate of rise of on-state current) | 400 [A/µs] |
I2t (TC/TA=25°C) | 9050000 [A2s] |
tf (turn-off=fall time) | 3000 [ns] |
Parametry termiczne i mechaniczne:
Tmin (minimalna temperatura robocza) | -40 [°C] |
Tmax (maksymalna temperatura robocza) | 125 [°C] |
Rthjc (case) | 0.00746 [°C/W] |
D - Średnica zewnętrzna | 110 [mm] |
H - Wysokość | 27 [mm] |
Fmin: | 48000 [N] |
Fmax: | 59000 [N] |