MSCSM120AM16CT1AG
Full SiC MOSFET 1200V / 138A
| ID Code: | 186151 |
| Producent: | Microsemi / Microchip Technology |
| Cena z VAT : | 286,1731 € |
| Cena bez VAT : | 236,5067 € |
| VAT: | 21 % |
| Dostępność: | na życzenie |
| Całkowity czas: | 0 szt |
| Oznaczenie producenta: | MSCSM120AM16CT1AG |
| Magazyn centralny Zdice: | 0 szt |
| Zewnętrzna pamięć (czas dostawy 5÷10 dni): | 0 szt |
| Jednostki:: | szt |
| !_prehled mnozstevnich slev_! | Ilość | Cena bez VAT | Cena z VAT |
| 1 + | 236,5067 € | 286,1731 € |
| 5 + | 226,6411 € | 274,2357 € |
| 10 + | 216,7754 € | 262,2983 € |
| 25 + | 206,9482 € | 250,4073 € |
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Podstawowe informacje:
| Oznaczenie producenta | MSCSM120AM16CT1AG |
| Type of casing: | MODUL |
| Obudowa: | !_modul-sp1f_! |
| Kategorie | Full SiC (MOS+D) |
| Konfiguracja: | !_half bridge_! |
| Rodzaj materiału: | !_sic_! |
| RoHS | Tak |
| REACH | Nie |
| NOVINKA | A |
| RoHS1 | Ano |
Opakowania i wagi:
| Jednostki: | szt |
| Waga: | 80 [g] |
| Rodzaj opakowania: | BOX |
| Małe opakowanie (liczba sztuk): | 1 |
Parametry elektrofizyczne:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 173 [A] |
| Idc max (Tc/Ta=25°C) | 173 [A] |
| Idc max (Tc/Ta=80÷89°C) | 138 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| Pd -s chladičem (Tc=25°C) | 745 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 16 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 30 [ns] |
| tf (turn-off=fall time) | 25 [ns] |
| Ft (transition/operation frequency) (@Inom.) | 0.04 [MHz] |
| Qg (Total Gate Charge) | 464 [nC] |
| Cin/CL Load Capacitance | 6040 pF |
Parametry termiczne i mechaniczne:
| Tmin (minimalna temperatura robocza) | -40 [°C] |
| Tmax (maksymalna temperatura robocza) | 150 [°C] |
| Rthjc1 IGBT | 0.2 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.477 [°C/W] |
| PIN wymiary | 0.00 [mm] |