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MSCSM120TAM31CT3AG
SiC MOSFET 1200V / 71A SixPack
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| ID Code: | 186279 |
| Producent: | Microchip Technology |
| Cena z VAT : | 601,5500 € |
| Cena bez VAT : | 497,1487 € |
| VAT: | 21 % |
| Dostępność: | na życzenie |
| Całkowity czas: | 0 szt |
| Oznaczenie producenta: | MSCSM120TAM31CT3AG |
| Magazyn centralny Zdice: | 0 szt |
| Jednostki:: | szt |
| !_prehled mnozstevnich slev_! | Ilość | Cena bez VAT | Cena z VAT | |
| 1 + | 497,1487 € | 601,5500 € | ||
| 5 + | 476,4347 € | 576,4860 € | ||
| 10 + | 455,7198 € | 551,4210 € | ||
| 25 + | 435,0054 € | 526,3565 € |
SiC MOSFET 1200V / 71A SixPack
The MSCSM120TAM31CT3AG device is designed for the following applications: • Uninterruptible Power Supplies • Switched Mode Power Supplies • EV motor and traction drive • Welding converters
• SiC Power MOSFET , High speed switching, Low RDS(on), Ultra low loss
• SiC Schottky Diode, Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance
The MSCSM120TAM31CT3AG device is designed for the following applications: • Uninterruptible Power Supplies • Switched Mode Power Supplies • EV motor and traction drive • Welding converters
• SiC Power MOSFET , High speed switching, Low RDS(on), Ultra low loss
• SiC Schottky Diode, Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
• Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance
Podstawowe informacje:
| Oznaczenie producenta | MSCSM120TAM31CT3AG |
| Typ składnika: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Konfiguracja: | Bridge 3f |
| Specyfikacja: | !_sic n-channel mosfet_! |
| Budowa: | 6*FET-BD+6*D |
| Rodzaj materiału: | SiC Full |
| RoHS | Tak |
| REACH | Nie |
| Type of casing: | MODUL |
| Obudowa: | !_sp3f_! |
| NOVINKA | A |
| RoHS1 | Ano |
Opakowania i wagi:
| Jednostki: | szt |
| Waga: | 125 [g] |
| Rodzaj opakowania: | BOX |
| Małe opakowanie (liczba sztuk): | 3 |
Parametry elektrofizyczne:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 89 [A] |
| Idc max (Tc/Ta=25°C) | 89 [A] |
| Idc max (Tc/Ta=80÷89°C) | 71 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| Pd -s chladičem (Tc=25°C) | 395 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 31 [mΩ] |
| tr (Turn-on / rise time) | 30 [ns] |
| tf (turn-off=fall time) | 25 [ns] |
| Qg (Total Gate Charge) | 232 [nC] |
| Cin/CL Load Capacitance | 3020 pF |
Parametry termiczne i mechaniczne:
| Tmin (minimalna temperatura robocza) | -40 [°C] |
| Tmax (maksymalna temperatura robocza) | 125 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.38 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.9 [°C/W] |
| RM - Pitch pins | 3.81 [mm] |
| RM1 - Rozstaw rzędów | 38 [mm] |
| W - Szerokość | 42.5 [mm] |
| L - Długość | 73.4 [mm] |
| H - Wysokość | 12 [mm] |
| Rozměry/Velikost (LxWxH) | 73x43x12 [mm] |
| PIN wymiary | 1,35 [mm] |
| Lv - Length of outlets | 5.3 [mm] |
Alternatywy i zamienniki
| Alternatywa 1: | 183781 - CCS050M12CM2 (CRE) |
| Alternatywne produkty 1: | CCB032M12FM3 |